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| PD - 96108 IRF7341QPBF Typical Applications * Anti-lock Braking Systems (ABS) * Electronic Fuel Injection * Air bag HEXFET(R) Power MOSFET VDSS 55V RDS(on) max 0.050@VGS = 10V 0.065@VGS = 4.5V ID 5.1A 4.42A Benefits * * * * * * * Advanced Process Technology Dual N-Channel MOSFET Ultra Low On-Resistance 175C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] Qualified Lead-Free S1 G1 S2 G2 1 2 3 4 Description Specifically designed for Automotive applications, these HEXFET (R) Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The 175C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. 8 7 D1 D1 D2 D2 6 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS EAS IAR EAR TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Junction and Storage Temperature Range Max. 55 5.1 4.2 42 2.4 1.7 16 20 140 5.1 See Fig. 14, 15, 16 -55 to + 175 Units V A W W mW/C V mJ A mJ C Thermal Resistance Parameter RJA Max. Units 62.5 C/W Maximum Junction-to-Ambient www.irf.com 07/23/07 1 IRF7341QPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 55 --- --- 1.0 10.4 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.052 0.043 0.056 --- --- --- --- --- --- 29 2.9 7.3 9.2 7.7 31 12.5 780 190 66 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.050 VGS = 10V, ID = 5.1A 0.065 VGS = 4.5V, ID = 4.42A --- V VDS = VGS, ID = 250A --- S VDS = 10V, ID = 5.2A 2.0 VDS = 44V, VGS = 0V A 25 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 44 ID = 5.2A 4.4 nC VDS = 44V 11 VGS = 10V --- VDD = 28V --- ID = 1.0A ns --- RG = 6.0 --- VGS = 10V --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- 51 76 2.4 A 42 1.2 77 114 V ns nC Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25C, IS = 2.6A, VGS = 0V TJ = 25C, IF = 2.6A di/dt = 100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on FR-4 board, t 10sec. Pulse width 300s; duty cycle 2%. 2 www.irf.com IRF7341QPBF 100 VGS 15.0V 10.0V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP 100 ID, Drain-to-Source Current (A) 10 ID, Drain-to-Source Current (A) 10 2.7V 2.7V VGS 15.0V 10.0V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP 1 1 20s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 100 0.1 0.1 1 20s PULSE WIDTH Tj = 175C 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 TJ = 25 C R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 5.2A I D , Drain-to-Source Current (A) 2.0 TJ = 175 C 10 1.5 1.0 0.5 1 2.0 V DS = 25V 20s PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7341QPBF 1400 1200 VGS = 0V, f = 1 MHZ C iss = Cgs + Cgd , SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 5.2A VGS , Gate-to-Source Voltage (V) Cds 16 VDS = 44V VDS = 27V VDS = 11V C, Capacitance(pF) 1000 800 600 400 200 0 1 Ciss 12 8 Coss Crss 10 100 4 0 0 10 20 30 40 50 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 175 C 10 I D , Drain Current (A) 100 10us 10 100us 1ms 1 10ms TJ = 25 C 1 0.1 0.2 V GS = 0 V 0.5 0.8 1.1 1.4 0.1 0.1 TC = 25 C TJ = 175 C Single Pulse 1 10 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7341QPBF 6.0 V DS 5.0 RD VGS RG D.U.T. + I D , Drain Current (A) 4.0 - VDD 3.0 10V Pulse Width 1 s Duty Factor 0.1 % 2.0 Fig 10a. Switching Time Test Circuit VDS 90% 1.0 0.0 25 50 TC , Case Temperature ( C) 75 100 125 150 175 Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 D = 0.50 Thermal Response (Z thJA ) 10 0.20 0.10 0.05 0.02 1 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7341QPBF RDS ( on ) , Drain-to-Source On Resistance ) ( ( , RDS(on) Drain-to -Source On Resistance) 0.070 0.100 0.060 0.080 0.050 0.060 VGS = 4.5V 0.040 VGS = 10V 0.020 0 10 20 30 40 50 60 ID , Drain Current ( A ) 0.040 0.030 ID = 7.1A 0.020 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 VGS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage QG Fig 12. Typical On-Resistance Vs. Drain Current 10 V QGS VG EAS , Single Pulse Avalanche Energy (mJ) 400 QGD 320 TOP BOTTOM ID 2.1A 4.3A 5.1A Charge 240 Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 160 50K 12V .2F .3F 80 D.U.T. VGS 3mA + V - DS 0 25 50 75 100 125 150 175 Starting Tj, Junction Temperature IG ID ( C) Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 14. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF7341QPBF 100 Duty Cycle = Single Pulse 10 Avalanche Current (A) 1 0.01 0.05 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses 0.1 0.01 0.001 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth 140 120 100 80 60 40 20 0 25 50 EAR , Avalanche Energy (mJ) TOP Single Pulse BOTTOM 10% Duty Cycle ID = 5.1A 75 100 125 150 Starting T J , Junction Temperature (C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com 7 IRF7341QPBF SO-8 Package Outline Dimensions are shown in millimeters (inches) 9 6 ' & ! % " $ 7 9DH 6 6 i p DI8C@T HDI H6Y $"! %'' # (' " &$ '( #(& ! (' (%' $&# HDGGDH@U@ST HDI H6Y "$ &$ !$ "" ( #' "' $ !$ $ # % @ $ # C !$Ab dA 6 9 @ r r C F G $AA76TD8 !$AA76TD8 !!'# !## (( % A (% $ A' !&AA76TD8 %"$AA76TD8 $' %! !$ # A $ !& A' %Y r r 6 FAA#$ 8 Ab#dA 'YAG & 'YAp 'YAi !$Ab dA 6 867 IPU@T) AA9DH@ITDPIDIBAEAUPG@S6I8DIBAQ@SA6TH@A #$H ((# !AA8PIUSPGGDIBA9DH@ITDPI)AHDGGDH@U@S "AA9DH@ITDPITA6S@ATCPXIADIAHDGGDH@U@STAbDI8C@Td #AAPVUGDI@A8PIAPSHTAUPAE@9@8APVUGDI@AHT !66 $AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A $Ab%d %AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A!$Ab d &AAA9DH@ITDPIADTAUC@AG@IBUCAPAAG@69AAPSATPG9@SDIBAUP AAAAA6ATV7TUS6U@ APPUQSDIU 'YA&!Ab!'d %#%Ab!$$d "YA !&Ab$d 'YA &'Ab&d SO-8 Part Marking @Y6HQG@)AUCDTADTA6IADSA& AHPTA@U DIU@SI6UDPI6G S@8UDAD@S GPBP ;;;; ) 96U@A8P9@AXX QA2A9@TDBI6U@TAG@69AS@@ QSP9V8UAPQUDPI6G A2AG6TUA9DBDUAPAAUC@A@6S XXA2AX@@F 6A2A6TT@H7GATDU@A8P9@ GPUA8P9@ Q6SUAIVH7@S www.irf.com Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 IRF7341QPBF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Autyomotive [Q101] market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/2007 www.irf.com 9 |
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